Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- $k$ Gate Dielectrics

Masahito Kanamura, Toshihiro Ohki, T. Kikkawa, +4

IEEE Electron Device Letters

Wide-bandgap SemiconductorGate DielectricsElectrical EngineeringEngineeringApplied Physics +6

High performance and high reliability AlGaN/GaN HEMTs

T. Kikkawa, Kozo Makiyama, Toshihiro Ohki, +4

physica status solidi (a)

Wide-bandgap SemiconductorHigh‐power Gan HemtsElectrical EngineeringEngineeringApplied Physics +7

Structure and Dielectric Properties of (Ca_1-xNd_2x/3)TiO₃

Masashi Yoshida, Naoki Hara, Takahiro Takada, +1

Japanese Journal of Applied Physics

Materials ScienceDielectric PropertiesMultiferroicsGdfeo 3Engineering +7

Structural analysis of orthorhombic ZrO2 by high resolution neutron powder diffraction.

Osamu Ohtaka, T. Yamanaka, Shōichi Kume, +3

Proceedings of the Japan Academy Series B

The Japanese Clinical Practice Guidelines for Management of Sepsis and Septic Shock 2020 (J‐SSCG 2020)

Moritoki Egi, Hiroshi Ogura, Tomoaki Yatabe, +223

Acute Medicine & Surgery

Trauma ResuscitationJ-sscg 2020Hospital MedicineCritical Care MedicineClinical Epidemiology +18

Surface-charge controlled AlGaN/GaN-power HFET without current collapse and gm dispersion

T. Kikkawa, Miyuki Nagahara, Naoya Okamoto, +5

Wide-bandgap SemiconductorElectrical EngineeringGm DispersionEngineeringSemiconductor Device +10

Enhancement of $f_{\mathrm {max}}$ to 910 GHz by Adopting Asymmetric Gate Recess and Double-Side-Doped Structure in 75-nm-Gate InAlAs/InGaAs HEMTs

Tsuyoshi Takahashi, Yoichi Kawano, Kozo Makiyama, +4

IEEE Transactions on Electron Devices

Electrical Engineering75-Nm-gate Inalas/ingaas HemtsEngineeringPhysicsHigh-frequency Device +11

MOCVD-grown InGaN-channel HEMT structures with electron mobility of over

Naoya Okamoto, Katsuyuki Hoshino, Naoki Hara, +2

Journal of Crystal Growth

Electrical EngineeringEngineeringApplied PhysicsCategoryiii-v SemiconductorMocvd-grown Ingan-channel Hemt

Structural Analysis of Orthorhombic Hafnia by Neutron Powder Diffraction

Osamu Ohtaka, T. Yamanaka, Shōichi Kume, +3

Journal of the American Ceramic Society

Materials ScienceX-ray CrystallographyInorganic ChemistryOrthorhombic Hfo 2Engineering +11

C-band 340-W and X-band 100-W GaN power amplifiers with over 50-% PAE

H. Shigematsu, Yusuke Inoue, Akihiko Akasegawa, +12

Wide-bandgap SemiconductorElectrical EngineeringC-band Power AmplifierEngineeringRf Semiconductor +7