Y. Takasu

The effect of nitrogen addition during high-rate homoepitaxial growth of diamond by microwave plasma CVD

Akiyoshi Chayahara, Yoshiaki Mokuno, Y. Horino et al. · Diamond and Related Materials · 2004 · 171 citations

Natural Sciences, Materials Engineering, Materials Science +10

Scaling of 32nm low power SRAM with high-K metal gate

Haining Yang, Robert Wong, R. Hasumi et al. · 2008 · 50 citations

Engineering, Computer Engineering, Electrical Engineering +16

A 45nm High Performance Bulk Logic Platform Technology (CMOS6) using Ultra High NA(1.07) Immersion Lithography with Hybrid Dual-Damascene Structure and Porous Low-k BEOL

H. Nii, T. Sanuki, Y. Okayama et al. · 2006 · 22 citations

Engineering, Computer Engineering, Electrical Engineering +14

New layout dependency in high-k/Metal Gate MOSFETs

M. Hamaguchi, Deleep R. Nair, D. Jaeger et al. · 2011 · 13 citations

Engineering, Electrical Engineering, Electronic Materials +16