Concepedia

Haining Yang

HY

3

Publications

303

Citations

3

H-Index

2005

Active since

Affiliations

IBM (United States)(Current)

Toshiba (United States)

Haining Yang is an author at IBM (United States) specializing in vlsi design, applied physics, and microelectronics.

Top concepts

EngineeringVlsi DesignApplied PhysicsMicroelectronicsComputer EngineeringElectrical EngineeringNanoelectronicsPhysicsCmos TechnologyMicrofabrication

Publications per year

2005–2008

3

Publications

3

Dual stress liner for high performance sub-45nm gate length SOI CMOS manufacturing

Haining Yang, R. Malik, Y. Li et al. · 2005 · 142 citations

Electrical Engineering, Physical Design (Electronics), Engineering +13

A cost effective 32nm high-K/ metal gate CMOS technology for low power applications with single-metal/gate-first process

X. Chen, S. Samavedam, Vijay Narayanan et al. · 2008 · 112 citations

Low-power Electronics, Low Power Applications, Electrical Engineering +14

Scaling of 32nm low power SRAM with high-K metal gate

Haining Yang, Robert Wong, R. Hasumi et al. · 2008 · 49 citations

Electrical Engineering, Engineering, Vlsi Design +14

Rows per page

1–3 of 3