Mohammad Ali Pourghaderi

Impact of the channel thickness on the performance of ultrathin InGaAs channel MOSFET devices

A. Alian, Mohammad Ali Pourghaderi, Yves Mols et al. · 2013 · 43 citations

Semiconductor Technology, Electrical Engineering, Engineering +8

RTN and PBTI-induced time-dependent variability of replacement metal-gate high-k InGaAs FinFETs

J. Franco, B. Kaczer, Niamh Waldron et al. · 2014 · 41 citations

Excessive Interface, Defect Tolerance, Electrical Engineering +12

Ultimate nano-electronics: New materials and device concepts for scaling nano-electronics beyond the Si roadmap

Nadine Collaert, A. Alian, Hiroaki Arimura et al. · Microelectronic Engineering · 2014 · 35 citations

Materials Science, Si Roadmap, Nanoscale System +13

Universality of Short-Channel Effects on Ultrascaled MOSFET Performance

Mohammad Ali Pourghaderi, Anh-Tuan Pham, Hesameddin Ilatikhameneh et al. · IEEE Electron Device Letters · 2017 · 18 citations

Device Modeling, Electrical Engineering, Engineering +13

Comprehensive Simulation Study of Direct Source-to-Drain Tunneling in Ultra-Scaled Si, Ge, and III-V DG-FETs

Zhengping Jiang, Jing Wang, Hong-Hyun Park et al. · IEEE Transactions on Electron Devices · 2017 · 14 citations

Wide-bandgap Semiconductor, Engineering, Direct Source-to-drain Tunneling +21