I.-C. Chen - Concepedia

Author

I.-C. Chen

Texas Instruments (United States)

Also Known As

I-Shun Chen, I.-C. Chen

Publications

407

Citations

H-Index

Concepts

All Affiliations

Texas Instruments (United States)

About

I.-C. Chen is an author at Texas Instruments (United States) specializing in electrical engineering, microelectronics, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	11	348
2	Electrical Engineering	11	11	348
3	Applied Physics	9	9	303
4	Computer Engineering	2	2	45
5	Materials Engineering	1	1	56

I.-C. Chen

Publications

360

Citations

H-Index

Page 1

	Year	Citations
Interface trap-enhanced gate-induced leakage current in MOSFET I.-C. Chen, C.W. Teng, D. J. Coleman, IEEE Electron Device Letters Device ModelingSemiconductor TechnologyElectrical EngineeringEngineeringInterface Trap Density	1989	99
Physical oxide thickness extraction and verification using quantum mechanical simulation C. Bowen, Chenjing L. Fernando, Gerhard Klimeck, Materials ScienceMaterials EngineeringElectrical EngineeringDevice ModelingEngineering	2002	56
A scaled 1.8 V, 0.18 μm gate length CMOS technology: device design and reliability considerations M. Rödder, S. Aur, I.-C. Chen Low-power ElectronicsPocket ImplantElectrical EngineeringEngineeringVlsi Design	2002	32
A shallow trench isolation study for 0.25/0.18 μm CMOS technologies and beyond Amitava Chatterjee, J. Esquivel, Soumya Shubhra Nag, Low-power ElectronicsElectrical EngineeringEngineeringVlsi DesignStress-induced Leakage Current	2002	28
Integration of unit processes in a shallow trench isolation module for a 0.25 μm complementary metal–oxide semiconductor technology Amitava Chatterjee, Inayat Ali, K. Joyner, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Unit ProcessesElectrical EngineeringEngineeringAdvanced Packaging (Semiconductors)Sti Flow	1997	27
Effects of poly depletion on the estimate of thin dielectric lifetime S.J. Wang, I.-C. Chen, H. L. Tigelaar IEEE Electron Device Letters Materials SciencePoly DepletionElectrical EngineeringThin Dielectric LifetimeEngineering	1991	25
High performance sub-half micron CMOS using rapid thermal processing R. A. Chapman, John Kuehne, P.S.-H. Ying, Low-power ElectronicsElectrical EngineeringEngineeringVlsi DesignAdvanced Packaging (Semiconductors)	2002	20
Gate current injection initiated by electron band-to-band tunneling in MOS devices I.-C. Chen, D. J. Coleman, C.W. Teng IEEE Electron Device Letters Gate Current InjectionNon-volatile MemoryEngineeringEmerging Memory TechnologySemiconductor Materials	1989	19
Performance and reliability enhancement for CVD tungsten polycided CMOS transistors due to fluorine incorporation in the gate oxide I.-C. Chen, M. Rödder, H.-J. Wann, IEEE Electron Device Letters Cvd TungstenElectrical EngineeringEngineeringNanoelectronicsCmos Transistors	1994	17
Pass transistor designs using pocket implant to improve manufacturability for 256 Mbit DRAM and beyond Amitava Chatterjee, J. Liu, S. Aur, Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer ArchitectureIntegrated Circuits	2002	13

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