C.W. Teng

Interface trap-enhanced gate-induced leakage current in MOSFET

I.-C. Chen, C.W. Teng, D. J. Coleman et al. · IEEE Electron Device Letters · 1989 · 99 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +9

Soft breakdown in titanium-silicided shallow source/drain junctions

Jiafu Lin, Sneha Banerjee, J. Lee et al. · IEEE Electron Device Letters · 1990 · 54 citations

Materials Engineering, Activation Energy, Electrical Engineering +13

Gate current injection initiated by electron band-to-band tunneling in MOS devices

I.-C. Chen, D. J. Coleman, C.W. Teng · IEEE Electron Device Letters · 1989 · 19 citations

Gate Current Injection, Non-volatile Memory, Engineering +22

Optimization of sidewall masked isolation process

C.W. Teng, G. Pollack, W. R. Hunter · IEEE Transactions on Electron Devices · 1985 · 17 citations

Electrical Engineering, Physical Design (Electronics), Engineering +14

A quantitative physical model for the band-to-band tunneling-induced substrate hot electron injection in MOS devices

I.-C. Chen, C.W. Teng · IEEE Transactions on Electron Devices · 1992 · 12 citations

Semiconductors, Device Modeling, Electrical Engineering +13