Soft breakdown in titanium-silicided shallow source/drain junctions

Abstract

Electrical characterization of the leakage current in p/sup +//n shallow junctions (X/sub j/=130 nm) shows that the current increases dramatically with titanium thickness and strongly depends on the reverse-bias voltage. The activation energy of leakage current extracted from the temperature dependence of the current decreases with increasing reverse-bias voltage. This behavior cannot be explained by the Shockley-Hall-Read (SHR) generation-recombination mechanism. A mechanism involving Frenkel-Poole barrier lowering of a trap potential is proposed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>