IEEE Electron Device Letters · 1990 · 54 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsCarrier TransportDefects In Electronic MaterialsElectronic Transport ModelingMetal-semiconductor ContactsP-n JunctionsActivation EnergyBreakdown VoltageGate Leakage CurrentJunction BreakdownJunction Leakage CurrentLeak CurrentsSource-drain LeakageTemperature Dependence
Electrical characterization of the leakage current in p/sup +//n shallow junctions (X/sub j/=130 nm) shows that the current increases dramatically with titanium thickness and strongly depends on the reverse-bias voltage. The activation energy of leakage current extracted from the temperature dependence of the current decreases with increasing reverse-bias voltage. This behavior cannot be explained by the Shockley-Hall-Read (SHR) generation-recombination mechanism. A mechanism involving Frenkel-Poole barrier lowering of a trap potential is proposed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Implanted noble gas atoms as diffusion markers in silicide formation
S.S. Lau, J. W. Mayer, Helmut Müller et al. · Thin Solid Films · 1975 · 266 citations
Natural Sciences, Materials Engineering, Materials Science +5
Titanium disilicide self-aligned source/drain + gate technology
C. K. Lau, Y.C. See, D.B. Scott et al. · 1982 · 100 citations