Margaret C. Lawson - Concepedia

Author

Margaret C. Lawson

IBM Research - Almaden

Also Known As

M. C. Lawson, M.C. Lawson, Margaret C. Lawson, Margaret Lawson

Publications

244

Citations

H-Index

Concepts

All Affiliations

IBM Research - Almaden IBM (United States)Micron (United States)IBM Research - Thomas J. Watson Research Center JSR (Japan)

About

Margaret C. Lawson is an author at IBM Research - Almaden specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	185
2	Applied Physics	8	8	185
3	Chemical Engineering	3	3	40
4	Chemistry	2	2	22
5	Natural Sciences	1	1	11

Margaret C. Lawson

Publications

185

Citations

H-Index

Page 1

	Year	Citations
Effect of thin-film imaging on line edge roughness transfer to underlayers during etch processes Darı́o L. Goldfarb, Arpan P. Mahorowala, Gregg M. Gallatin, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena EngineeringElectron-beam LithographyMicroscopyEtch ProcessesBeam Lithography	2004	86
Performance of tri-layer process required for 22 nm and beyond Yayi Wei, Martin Glodde, Hakeem Yusuff, Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE Materials ScienceElectrical EngineeringWafer Scale ProcessingEngineeringHigh Silicon Content	2011	23
Fluoro-alcohol materials with tailored interfacial properties for immersion lithography Daniel P. Sanders, Linda K. Sundberg, Ratnam Sooriyakumaran, Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE Materials ScienceChemical EngineeringEngineeringWater Contact AngleImmersion Lithography	2007	18
Impact of thin resist processes on post-etch LER Arpan P. Mahorowala, Darı́o L. Goldfarb, Karen Temple, Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE EngineeringElectron-beam LithographyResistorBeam LithographyElectronic Packaging	2003	13
IBM-JSR 193-nm negative tone resist: polymer design, material properties, and lithographic performance Kaushal Patel, Margaret C. Lawson, Pushkara R. Varanasi, Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE EngineeringPolymer DesignElectron-beam LithographyMechanical EngineeringLithographic Performance	2004	12
193nm single layer photoresists: defeating tradeoffs with a new class of fluoropolymers Pushkara R. Varanasi, Ranee W. Kwong, Mahmoud Khojasteh, Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE Optical MaterialsEngineeringElectron-beam LithographyMicroscopyHfa Materials	2005	11
Rational design in cyclic olefin resists for sub-100-nm lithography Wenjie Li, Pushkara R. Varanasi, Margaret C. Lawson, Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE EngineeringElectron-beam LithographyChemistryFluorine-containing Hfa GroupChemical Engineering	2003	11
IBM 193nm Semiconductor Resist: Material Properties, Resist Characteristics and Lithographic Performance. Pushkara R. Varanasi, Ann M. Mewherter, Margaret C. Lawson, Journal of Photopolymer Science and Technology EngineeringIbm 193NmLithographic PerformanceResolution CapabilitiesPositive Resist	1999	11

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