D. Lafond

High immunity to threshold voltage variability in undoped ultra-thin FDSOI MOSFETs and its physical understanding

O. Weber, O. Faynot, F. Andrieu et al. · 2008 · 159 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +14

Bonded planar double-metal-gate NMOS transistors down to 10 nm

M. Vinet, T. Poiroux, J. Widiez et al. · IEEE Electron Device Letters · 2005 · 128 citations

Alignment Marks, Electrical Engineering, Engineering +7

Advances in 3D CMOS sequential integration

P. Batude, M. Vinet, A. Pouydebasque et al. · 2009 · 114 citations

Engineering, Vlsi Design, Sequential Cmos Integration +17

Low leakage and low variability Ultra-Thin Body and Buried Oxide (UT2B) SOI technology for 20nm low power CMOS and beyond

F. Andrieu, O. Weber, J. Mazurier et al. · 2010 · 103 citations

Engineering, Vlsi Design, Integrated Circuits +16

Chemical and structural properties of conducting nanofilaments in TiN/HfO₂-based resistive switching structures

P. Calka, E. Martínez, V. Delaye et al. · Nanotechnology · 2013 · 82 citations