D. Barlini

Temperature measurement on series resistance and devices in power packs based on on-state voltage drop monitoring at high current

X. Perpiñà, J.F. Servière, J. M. Saiz et al. · Microelectronics Reliability · 2006 · 102 citations

Electrical Engineering, Engineering, Power Device +10

New technique for the measurement of the static and of the transient junction temperature in IGBT devices under operating conditions

D. Barlini, Mauro Ciappa, Alberto Castellazzi et al. · Microelectronics Reliability · 2006 · 90 citations

Electrical Engineering, Engineering, Power Device +8

Measurement of the transient junction temperature in MOSFET devices under operating conditions

D. Barlini, Mauro Ciappa, Michel Mermet-Guyennet et al. · Microelectronics Reliability · 2007 · 62 citations

Device Modeling, Electrical Engineering, Semiconductor Device +10

Measurement and modeling of the electron impact-ionization coefficient in silicon up to very high temperatures

Susanna Reggiani, N. Jensen, G. Groos et al. · IEEE Transactions on Electron Devices · 2005 · 46 citations

Engineering, Silicon On Insulator, Semiconductor Device +19

Shrinking horizon parametrized predictive control with application to energy-efficient train operation

Hafsa Farooqi, Lorenzo Fagiano, Patrizio Colaneri et al. · Automatica · 2019 · 41 citations · Full text

Mathematical Programming, Engineering, Energy Management +8