New technique for the measurement of the static and of the transient junction temperature in IGBT devices under operating conditions - Concepedia

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New technique for the measurement of the static and of the transient junction temperature in IGBT devices under operating conditions

90

Citations

1

References

2006

Year

D. Barlini, Mauro Ciappa, Alberto Castellazzi, Michel Mermet-Guyennet, Wolf Fïchtner

Microelectronics Reliability

Electrical EngineeringEngineeringPower DeviceBias Temperature InstabilityPower Semiconductor DeviceTransient Junction TemperatureIgbt DevicesPower ElectronicsDevice ReliabilityNew TechniqueElectrical Insulation

References

	Year	Citations

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