D. S. Poloskin

Point defects in gamma-irradiated n-GaN

V. V. Emtsev, V. Yu. Davydov, W. V. Lundin et al. · Semiconductor Science and Technology · 2000 · 45 citations

Semiconductors, Semiconductor Technology, Wide-bandgap Semiconductor +12

Effect of Annealing on Defects in As-Grown and γ-Ray Irradiated n-GaN Layers

N. M. Shmidt, D. V. Davydov, V. V. Emtsev et al. · physica status solidi (b) · 1999 · 39 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +9

Radiation-induced defects in n-type GaN and InN

V. V. Emtsev, V. Yu. Davydov, E. E. Häller et al. · Physica B Condensed Matter · 2001 · 31 citations

Physics, Applied Physics, Gan Power Device +2

Persistent photoconductivity and electron paramagnetic resonance in zinc oxide ceramics

R. Laiho, D. S. Poloskin, Yu. P. Stepanov et al. · Journal of Applied Physics · 2009 · 29 citations

Materials Science, Electrical Engineering, Engineering +11

Correlation of mosaic-structure peculiarities with electric characteristics and surface multifractal parameters for GaN epitaxial layers

N. M. Shmidt, V. V. Emtsev, A D Kryzhanovsky et al. · Nanotechnology · 2001 · 23 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +14