N. M. Shmidt

Nonradiative recombination dynamics in InGaN/GaN LED defect system

A. E. Chernyakov, M. M. Sobolev, N. M. Shmidt et al. · Superlattices and Microstructures · 2008 · 43 citations

Electrical Engineering, Engineering, Applied Physics +5

Degradation-induced low frequency noise and deep traps in GaN/InGaN near-UV LEDs

In‐Hwan Lee, A. Y. Polyakov, Sung-Min Hwang et al. · Applied Physics Letters · 2017 · 25 citations

Wide-bandgap Semiconductor, Engineering, Local Leakage Channels +19

Characterization of HVPE‐grown UV LED heterostructures

S Yu Kurin, Andrey Antipov, I. S. Barash et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2014 · 24 citations

Materials Science, Electronic Devices, Optical Materials +12

Correlation of mosaic-structure peculiarities with electric characteristics and surface multifractal parameters for GaN epitaxial layers

N. M. Shmidt, V. V. Emtsev, A D Kryzhanovsky et al. · Nanotechnology · 2001 · 23 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +14

Two channels of non-radiative recombination in InGaN/GaN LEDs

N. S. Averkiev, A. E. Chernyakov, M. E. Levinshteĭn et al. · Physica B Condensed Matter · 2009 · 21 citations

Photonics, Solid-state Lighting, Engineering +6