Demonstration of nonpolar a-plane InGaN/GaN light emitting diode on r-plane sapphire substrate

Sung-Min Hwang, Yong Gon Seo, Kwang Hyeon Baik, +5

Applied Physics Letters

Materials SciencePhotonicsElectrical EngineeringSmooth Surface MorphologyEngineering +12

Lithium Insertion in SiAg Powders Produced by Mechanical Alloying

Sung-Min Hwang, Heon-Young Lee, Serk-Won Jang, +4

Electrochemical and Solid-State Letters

EngineeringMechanical EngineeringMechanical Alloying TechniqueMechanical Alloying ProcessMaterials Science +16

Changes in electron and hole traps in GaN-based light emitting diodes from near-UV to green spectral ranges

In‐Hwan Lee, A. Y. Polyakov, N. B. Smirnov, +6

Applied Physics Letters

Deep ElectronEngineeringHole TrapsGreen LedsOptoelectronic Devices +18

Enhanced light extraction of nonpolar a-plane (11-20) GaN light emitting diodes on sapphire substrates by photo-enhanced chemical wet etching

Younghun Jung, Jihyun Kim, Soohwan Jang, +3

Optics Express

EngineeringSidewall FaceEnhanced Light ExtractionGan LedsOptical Properties +14

Degradation-induced low frequency noise and deep traps in GaN/InGaN near-UV LEDs

In‐Hwan Lee, A. Y. Polyakov, Sung-Min Hwang, +7

Applied Physics Letters

Wide-bandgap SemiconductorEngineeringLocal Leakage ChannelsSemiconductorsElectrical Stress +17

Orange a-plane InGaN/GaN light-emitting diodes grown on r-plane sapphire substrates

Yong Gon Seo, Kwang Hyeon Baik, Hooyoung Song, +3

Optics Express

White OledElectrical EngineeringSolid-state LightingEngineeringPhotoluminescence +13

Investigation of carrier transport properties in semipolar (112¯2) GaN films with low defect density

Soohwan Jang, Hyonwoong Kim, Doo Soo Kim, +3

Applied Physics Letters

SemiconductorsLow Bpsf DensityElectrical EngineeringSemiconductor TechnologyEngineering +10

Opposite carrier dynamics and optical absorption characteristics under external electric field in nonpolar vs polar InGaN/GaN based quantum heterostructures

Sedat Nizamoğlu, Jung-Hun Choi, Seung-Jae Lee, +5

Optics Express

Stark EffectWide-bandgap SemiconductorPhotoluminescenceEngineeringPhysics +12

Structural and electrical anisotropies of Si-doped <i>a</i>-plane (11–20) GaN films with different SiN<i>_x</i> interlayers

Ji Hoon Kim, Sung-Min Hwang, Yong Gon Seo, +2

Semiconductor Science and Technology

Wide-bandgap SemiconductorEngineeringHall Effect MeasurementSemiconductor MaterialsSinx Coverage +15

Effect of Basal-plane Stacking Faults on X-ray Diffraction of Non-polar (1120) a-plane GaN Films Grown on (1102) r-plane Sapphire Substrates

Ji Hoon Kim, Sung-Min Hwang, Kwang Hyeon Baik, +1

JSTS Journal of Semiconductor Technology and Science

Wide-bandgap SemiconductorEngineeringSemiconductorsR-plane Sapphire SubstratesMaterials Science +14