Correlation of mosaic-structure peculiarities with electric characteristics and surface multifractal parameters for GaN epitaxial layers

Abstract

The first successful results of the application of multifractal analysis to a quantitative description of mosaic-structure peculiarities, that are typical of a GaN epitaxial layer with hexagonal modification grown on (0001) sapphire substrates, have been obtained. The characteristic size of the mosaic structure has been measured to be 200-800 nm. The direct dependence of mobility on the multifractal parameters (the Renyi dimension or the self-organization degree and the order-degree index) of the surface topology of the mosaic structure has been observed for all GaN layers investigated.