I. Eliashevich

Phase separation in InGaN/GaN multiple quantum wells and its relation to brightness of blue and green LEDs

C. A. Tran, R. F. Karlicek, M. Schurman et al. · Journal of Crystal Growth · 1998 · 65 citations

Photonics, Solid-state Lighting, Engineering +9

Optical evidence of an electrothermal degradation of InGaN-based light-emitting diodes during electrical stress

M. Pavesi, M. Manfredi, G. Salviati et al. · Applied Physics Letters · 2004 · 62 citations

High Current Levels, Optical Materials, Engineering +22

AlGaN/GaN HEMT on Diamond Technology Demonstration

Gregg H. Jessen, J. Gillespie, G. D. Via et al. · 2006 · 60 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

Failure Modes and Mechanisms of DC-Aged GaN LEDs

Gaudenzio Meneghesso, S. Levada, Enrico Zanoni et al. · physica status solidi (a) · 2002 · 57 citations

Electrical Engineering, Solid-state Lighting, High-brightness Gan/ingan Leds +12

Reliability of visible GaN LEDs in plastic package

Gaudenzio Meneghesso, S. Levada, Enrico Zanoni et al. · Microelectronics Reliability · 2003 · 51 citations

Electrical Engineering, Solid-state Lighting, Visible Gan Leds +4