AlGaN/GaN HEMT on Diamond Technology Demonstration

Abstract

This letter is a first report on the operation of AlGaN/GaN high-electron mobility transistors (HEMTs) atomically attached to a CVD diamond substrate. This technology demonstration shows the feasibility of producing GaN based devices on polycrystalline CVD diamond substrates to maximize heat extraction from devices operating at high power by situating the diamond substrates in the immediate proximity of the transistor channel. Such an approach offers tremendous opportunity for efficient and effective heat management of high power devices. We demonstrate the ability to preserve the electrical properties of AlGaN/GaN HEMTs throughout the GaN-on-diamond atomic attachment process and report on the fabricated DC and small-signal HEMT characteristics