Concepedia

Hassan Gargouri

HG

Statistics

Publications

25

Citations

861

H-Index

18

Active since

2008

Affiliations

SENTECH Instruments (Germany)(Current)

Brandenburg University of Technology Cottbus-Senftenberg

Ferdinand-Braun-Institut

Technische Universität Braunschweig

Leibniz Institute for High Performance Microelectronics

Hassan Gargouri is an author at SENTECH Instruments (Germany) specializing in engineering, applied physics, and materials science.

Top concepts

Publications per year

2008–2022

25

Publications

25

Lateral 1.8 kV $\beta$ -Ga<sub>2</sub>O<sub>3</sub> MOSFET With 155 MW/cm<sup>2</sup> Power Figure of Merit

Kornelius Tetzner, Eldad Bahat‐Treidel, Oliver Hilt et al. · IEEE Electron Device Letters · 2019 · 139 citations

, , +12

Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al<sub>2</sub>O<sub>3</sub>-films

Jörg Haeberle, Karsten Henkel, Hassan Gargouri et al. · Beilstein Journal of Nanotechnology · 2013 · 110 citations · Full text

, , +14

Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition

Ali Mahmoodinezhad, C. Janowitz, Franziska Naumann et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2020 · 75 citations

, , +12

Gas Diffusion Barriers Prepared by Spatial Atmospheric Pressure Plasma Enhanced ALD

Lukas Hoffmann, D. Theirich, Sven Pack et al. · ACS Applied Materials & Interfaces · 2017 · 59 citations

Transition metal oxides as charge injecting layer for admittance spectroscopy

M. Hoping, Christian Schildknecht, Hassan Gargouri et al. · Applied Physics Letters · 2008 · 54 citations

, , +19

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