Lateral 1.8 kV $\beta$ -Ga₂O₃ MOSFET With 155 MW/cm² Power Figure of Merit

Abstract

-Lateral β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> MOSFET for power switching applications with a 1.8 kV breakdown voltage and a record power figure of merit of 155 MW/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> are demonstrated. Sub-μm gate length combined with gate recess was used to achieve low ON-state resistances with reasonable threshold voltages above -24 V. The combination of compensation-doped high-quality crystals, implantationbased inter-device isolation, and SiN <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> -passivation yielded in consistently high average breakdown field strengths of 1.8-2.2 MV/cm for gate-drain spacings between 2 and 10 μm. These values outperform the results of more established wide-bandgap device technologies, such as SiC or GaN, and the major Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> material promise-a higher breakdown strength-is well demonstrated.