Andreas Thies

Lateral 1.8 kV $\beta$ -Ga₂O₃ MOSFET With 155 MW/cm² Power Figure of Merit

Kornelius Tetzner, Eldad Bahat‐Treidel, Oliver Hilt et al. · IEEE Electron Device Letters · 2019 · 144 citations

Engineering, Electrical Engineering, Microelectronics +9

Selective area isolation of β-Ga2O3 using multiple energy nitrogen ion implantation

Kornelius Tetzner, Andreas Thies, Eldad Bahat‐Treidel et al. · Applied Physics Letters · 2018 · 42 citations

Natural Sciences, Materials Engineering, Materials Science +14

On-chip integration of single solid-state quantum emitters with a SiO₂ photonic platform

Florian Böhm, Niko Nikolay, Christoph Pyrlik et al. · New Journal of Physics · 2019 · 29 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

InP-DHBT-on-BiCMOS Technology With $f_{T}/f_{\max}$ of 400/350 GHz for Heterogeneous Integrated Millimeter-Wave Sources

T. Kraemer, Ina Ostermay, Thomas Jensen et al. · IEEE Transactions on Electron Devices · 2013 · 26 citations

Engineering, Electrical Engineering, Microelectronics +16

On the Conduction Properties of Vertical GaN n-Channel Trench MISFETs

Eldad Bahat‐Treidel, Oliver Hilt, Veit Hoffmann et al. · IEEE Journal of the Electron Devices Society · 2021 · 24 citations · Full text

Engineering, Electrical Engineering, Materials Science +16