Concepedia

Karina Ickert

KI

Statistics

Publications

2

Citations

181

H-Index

2

Active since

2019

Affiliations

Ferdinand-Braun-Institut(Current)

Leibniz Institute for Crystal Growth

Karina Ickert is an author at Ferdinand-Braun-Institut specializing in electrical engineering, engineering, and device characterization.

Publications per year

2019–2023

2

Publications

2

Lateral 1.8 kV $\beta$ -Ga<sub>2</sub>O<sub>3</sub> MOSFET With 155 MW/cm<sup>2</sup> Power Figure of Merit

Kornelius Tetzner, Eldad Bahat‐Treidel, Oliver Hilt et al. · IEEE Electron Device Letters · 2019 · 144 citations

, , +9

Enhancement-mode vertical (100) β-Ga<sub>2</sub>O<sub>3</sub> FinFETs with an average breakdown strength of 2.7 MV cm<sup>−1</sup>

Kornelius Tetzner, Michael Klupsch, Andreas Popp et al. · Japanese Journal of Applied Physics · 2023 · 37 citations · Full text

, , +17

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