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Transition metal oxides as charge injecting layer for admittance spectroscopy
54
Citations
13
References
2008
Year
EngineeringAdmittance Spectroscopy MethodChemistryCharge TransportNanoelectronicsAdmittance SpectroscopyTransition Metal OxidesCharge Carrier TransportMaterials SciencePhysicsOxide ElectronicsOrganic SemiconductorMolecular MaterialPhysical ChemistrySemiconductor MaterialElectrical PropertySurface CharacterizationTungsten OxideNatural SciencesSurface ScienceApplied PhysicsCondensed Matter Physics
Admittance spectroscopy is a simple yet powerful tool to determine the carrier mobility of organic compounds. One requirement is to have an Ohmic contact for charge injection. By employing a thin interfacial layer of tungsten oxide, or molybdenum oxide we have found a possibility to efficiently inject holes into organic materials with a deep highest occupied molecular orbital level down to 6.3eV. These results considerably enhance the application range of the admittance spectroscopy method. The measured data are in excellent agreement with data obtained by the time-of-flight technique.
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