L. Altimime

10×10nm<sup>2</sup> Hf/HfO<inf>x</inf> crossbar resistive RAM with excellent performance, reliability and low-energy operation

B. Govoreanu, Gouri Sankar Kar, YY Chen et al. · 2011 · 607 citations

Engineering, Electrical Engineering, Materials Science +12

Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

L. Goux, P. Czarnecki, Y. Y. Chen et al. · Applied Physics Letters · 2010 · 229 citations

Natural Sciences, Materials Engineering, Materials Science +16

Balancing SET/RESET Pulse for $>\hbox{10}^{10}$ Endurance in $\hbox{HfO}_{2}\hbox{/Hf}$ 1T1R Bipolar RRAM

Yang Yin Chen, B. Govoreanu, L. Goux et al. · IEEE Transactions on Electron Devices · 2012 · 185 citations

Engineering, Computer Engineering, Fault-tolerant Computing +10

A Nonvolatile 2-Mbit CBRAM Memory Core Featuring Advanced Read and Program Control

Stefan Dietrich, M. Angerbauer, Milena Ivanov et al. · IEEE Journal of Solid-State Circuits · 2007 · 113 citations

Engineering, Computer Engineering, Electrical Engineering +13

Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells

L. Goux, Karl Opsomer, R. Degraeve et al. · Applied Physics Letters · 2011 · 99 citations · Full text

Engineering, Materials Engineering, Materials Science +16