Chupeng Yi

A Millimeter-Wave AlGaN/GaN HEMT Fabricated With Transitional-Recessed-Gate Technology for High-Gain and High- Linearity Applications

Sheng Wu, Yue Hao, Xiaohua Ma et al. · IEEE Electron Device Letters · 2019 · 44 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

High linearity and high power performance with barrier layer of sandwich structure and Al_0.05GaN back barrier for X-band application

Bin Hou, Ling Yang, Minhan Mi et al. · Journal of Physics D Applied Physics · 2020 · 28 citations · Full text

Wide-bandgap Semiconductor, Sandwich Structure, Electrical Engineering +12

A fast small signal modeling method for GaN HEMTs

Ziyue Zhao, Yang Lu, Chupeng Yi et al. · Solid-State Electronics · 2020 · 20 citations

Electrical Engineering, Gan Hemts, Engineering +2

Influence of Different Fin Configurations on Small-Signal Performance and Linearity for AlGaN/GaN Fin-HEMTs

Hengshuang Zhang, Xiaohua Ma, Meng Zhang et al. · IEEE Transactions on Electron Devices · 2019 · 19 citations

Electrical Engineering, Engineering, Rf Semiconductor +14

A 10-W High-Power Amplifier Using Input Nonlinearity for <i>K</i>-Band Satcom Applications

Chupeng Yi, Yang Lu, Ziyue Zhao et al. · IEEE Microwave and Wireless Components Letters · 2022 · 12 citations

Electrical Engineering, Input Harmonic Impedance, Engineering +5