David Angell

Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology

B. Jagannathan, Mahmoud Khater, F. Pagette et al. · IEEE Electron Device Letters · 2002 · 262 citations

Engineering, Electrical Engineering, Microelectronics +15

SiGe HBTs with cut-off frequency of 350 GHz

Jae-Sung Rieh, B. Jagannathan, H. Chen et al. · 2003 · 201 citations

Engineering, Electrical Engineering, Materials Science +17

The kinetics of the ferrous/ferric and ferro/ferricyanide reactions at platinum and gold electrodes

David Angell, T. Dickinson · Journal of Electroanalytical Chemistry · 1972 · 166 citations

Natural Sciences, Chemistry, Materials Science +14

Principal Component Analysis of Optical Emission Spectroscopy and Mass Spectrometry: Application to Reactive Ion Etch Process Parameter Estimation Using Neural Networks

Reza Shadmehr, David Angell, Paul B. Chou et al. · Journal of The Electrochemical Society · 1992 · 59 citations

Natural Sciences, Chemical Engineering, Materials Science +15

Cryogenic reactive ion etching of silicon in SF6

Tim D. Bestwick, G. S. Oehrlein, David Angell · Applied Physics Letters · 1990 · 34 citations

Natural Sciences, Materials Science, Physics +17