K. Maeguchi

A 10 ns 54*54 b parallel structured full array multiplier with 0.5 mu m CMOS technology

J. Mori, M. Nagamatsu, M. Hirano et al. · IEEE Journal of Solid-State Circuits · 1991 · 98 citations

Electrical Engineering, Engineering, Vlsi Design +12

Radiation-Induced Interface States of Poly-Si Gate MOS Capacitors Using Low Temperature Gate Oxidation

Kiyomi Naruke, Masahiro Yoshida, K. Maeguchi et al. · IEEE Transactions on Nuclear Science · 1983 · 81 citations

Electrical Engineering, Engineering, Bias Temperature Instability +8

Analysis of hot-carrier-induced degradation mode on pMOSFET's

F. Matsuoka, Hiroshi Iwai, H. Hayashida et al. · IEEE Transactions on Electron Devices · 1990 · 67 citations

Buried-channel Pmosfets, Electrical Engineering, Engineering +15

Analysis on gate-oxide thickness dependence of hot-carrier-induced degradation in thin-gate oxide nMOSFET's

Y. Toyoshima, Hiroshi Iwai, F. Matsuoka et al. · IEEE Transactions on Electron Devices · 1990 · 66 citations

Device Modeling, Gate-oxide Thickness Dependence, Electrical Engineering +12

A single-chip MPEG2 video decoder LSI

T. Demura, T. Oto, K. Kitagaki et al. · 2002 · 40 citations

Mpeg1 Standard, Engineering, Image Coding +9