Sarah McGowan

The use of EUV lithography to produce demonstration devices

Bruno LaFontaine, Yunfei Deng, Ryoung-Han Kim et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2008 · 42 citations

Line-edge roughness in 193-nm resists: lithographic aspects and etch transfer

Thomas I. Wallow, Alden Acheta, Yuansheng Ma et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2007 · 28 citations

Engineering, Electron-beam Lithography, Photoresist Ler +16

A Novel Approach for the Patterning and High-Volume Production of Sub-40-nm Gates

Karen Romero, Ralf Stephan, M. Mazur et al. · IEEE Transactions on Semiconductor Manufacturing · 2005 · 20 citations

Engineering, Patterning Layer, Novel Approach +18

Process window enhancement using advanced RET techniques for 20nm contact layer

Ping Yang, Sarah McGowan, Ying Gong et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2014 · 15 citations

Advanced Ret Techniques, Mask Optimization, Engineering +8

Process Window and Device Variations Evaluation using Array-Based Characterization Circuits

Cyrus Tabery, M. Craig, G. Burbach et al. · 2006 · 11 citations

Engineering, Vlsi Design, Measurement +22