K. Riepe

Reliability behavior of GaN HEMTs related to Au diffusion at the Schottky interface

Helmut Jung, R. Behtash, J. Thorpe et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2009 · 42 citations

Engineering, Electrical Engineering, Materials Science +17

Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems

M. Dammann, W. Pletschen, Patrick Waltereit et al. · Microelectronics Reliability · 2009 · 29 citations

Engineering, Electrical Engineering, Materials Science +16

GaN HEMT and MMIC development at Fraunhofer IAF: performance and reliability

Patrick Waltereit, W. Bronner, R. Quay et al. · physica status solidi (a) · 2009 · 28 citations

Engineering, Electrical Engineering, Materials Science +17

Breakdown Mechanisms in Pseudomorphic InAlAs/In_xGa_1-xAs High Electron Mobility Transistors on InP. I: Off-State

Jürgen Dickmann, Steffen Schildberg, K. Riepe et al. · Japanese Journal of Applied Physics · 1995 · 20 citations

Engineering, Electrical Engineering, Materials Science +17

New qualified industrial AlGaN/GaN HEMT process: Power performances & reliability figures of merit

D. Floriot, H. Blanck, Diane Bouw et al. · European Microwave Integrated Circuit Conference · 2012 · 19 citations

Engineering, Electrical Engineering, Materials Science +17