Naohiro Tsurumi

AlN Passivation Over AlGaN/GaN HFETs for Surface Heat Spreading

Naohiro Tsurumi, Hiroaki Ueno, Tomohiro Murata et al. · IEEE Transactions on Electron Devices · 2010 · 73 citations

Wide-bandgap Semiconductor, Electrical Engineering, Electronic Devices +13

In-Situ Scanning Tunneling Microscope Study of Formation Process of Ultrathin Si Layer by Molecular Beam Epitaxy on GaAs(001)-(2×4) Surface

Naohiro Tsurumi, Yasuhiko Ishikawa, Takashi Fukui et al. · Japanese Journal of Applied Physics · 1998 · 19 citations

Materials Science, Semiconductors, Engineering +15

Effects of Initial Surface Reconstruction on Silicon Interface Control Layer Based Passivation of (001) GaAs Surfaces Studied in an Ultrahigh-Vacuum Multichamber System

Morimichi Mutoh, Naohiro Tsurumi, HidekiHasegawa HidekiHasegawa · Japanese Journal of Applied Physics · 1999 · 16 citations

Engineering, Semiconductor Materials, Optoelectronic Devices +21

Improved hysteresis in a normally-off AlGaN/GaN MOS heterojunction field-effect transistor with a recessed gate structure formed by selective regrowth

Satoshi Nakazawa, Nanako Shiozaki, Noboru Negoro et al. · Japanese Journal of Applied Physics · 2017 · 16 citations

Selective Regrowth, Semiconductor Technology, Electrical Engineering +11

Scanning tunneling microscopy and x-ray photoelectron spectroscopy studies of atomic level structure and Fermi level pinning on GaAs(110) surfaces grown by molecular beam epitaxy

Yasuhiko Ishikawa, Naohiro Tsurumi, Takashi Fukui et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1998 · 14 citations

Materials Science, Semiconductors, Engineering +14