Nanako Shiozaki

Formation of Thin Native Oxide Layer on n-GaN by Electrochemical Process in Mixed Solution with Glycol and Water

Nanako Shiozaki, Taketomo Sato, Tamotsu Hashizume · Japanese Journal of Applied Physics · 2007 · 29 citations · Full text

High-speed switching and current-collapse-free operation by GaN gate injection transistors with thick GaN buffer on bulk GaN substrates

Hiroyuki Handa, Shinji Ujita, Daisuke Shibata et al. · 2016 · 26 citations

Wide-bandgap Semiconductor, Thick Gan Buffer, Electrical Engineering +11

Improved hysteresis in a normally-off AlGaN/GaN MOS heterojunction field-effect transistor with a recessed gate structure formed by selective regrowth

Satoshi Nakazawa, Nanako Shiozaki, Noboru Negoro et al. · Japanese Journal of Applied Physics · 2017 · 16 citations

Selective Regrowth, Semiconductor Technology, Electrical Engineering +11

Improvements of electronic and optical characteristics of n-GaN-based structures by photoelectrochemical oxidation in glycol solution

Nanako Shiozaki, Tamotsu Hashizume · Journal of Applied Physics · 2009 · 15 citations

Wide-bandgap Semiconductor, Engineering, N-gan-based Structures +20

Effects of surface states and Si-interlayer based surface passivation on GaAs quantum wires grown by selective molecular beam epitaxy

Nanako Shiozaki, Taketomo Sato, Hideki Hasegawa · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2005 · 13 citations · Full text

Gaas Quantum Wires, Electrical Engineering, Photoluminescence +9