Satoshi Nakazawa

Reduction of doping and trap concentrations in 4H–SiC epitaxial layers grown by chemical vapor deposition

Tsunenobu Kimoto, Satoshi Nakazawa, Kouichi Hashimoto et al. · Applied Physics Letters · 2001 · 135 citations · Full text

Engineering, Materials Engineering, Materials Science +15

Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambient

Takahiro Yamada, Joyo Ito, Ryohei Asahara et al. · Journal of Applied Physics · 2017 · 94 citations

Natural Sciences, Materials Engineering, Materials Science +17

Effect of nitrogen incorporation into Al-based gate insulators in AlON/AlGaN/GaN metal–oxide–semiconductor structures

Ryohei Asahara, Mikito Nozaki, Takahiro Yamada et al. · Applied Physics Express · 2016 · 54 citations

Engineering, Materials Engineering, Materials Science +17

Chemical and Potential Bending Characteristics of SiN_x/AlGaN Interfaces Prepared by In situ Metal-Organic Chemical Vapor Deposition

Eri Ogawa, Tamotsu Hashizume, Satoshi Nakazawa et al. · Japanese Journal of Applied Physics · 2007 · 27 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Implementation of atomic layer deposition-based AlON gate dielectrics in AlGaN/GaN MOS structure and its physical and electrical properties

Mikito Nozaki, K. Watanabe, Takahiro Yamada et al. · Japanese Journal of Applied Physics · 2018 · 27 citations

Engineering, Materials Engineering, Materials Science +17