B. Ogle

Electrical properties of thin SiON/Ta2O5 gate dielectric stacks

Michel Houssa, R. Degraeve, Paul Mertens et al. · Journal of Applied Physics · 1999 · 49 citations

Engineering, Electrical Engineering, Materials Science +17

Impact of tunnel currents and channel resistance on the characterization of channel inversion layer charge and polysilicon-gate depletion of sub-20-Å gate oxide MOSFETs

Khaled Ahmed, E. Ibok, G.C.-F. Yeap et al. · IEEE Transactions on Electron Devices · 1999 · 43 citations

Engineering, Electrical Engineering, Microelectronics +16

Comparative physical and electrical metrology of ultrathin oxides in the 6 to 1.5 nm regime

Khaled Ahmed, E. Ibok, Gurjeet S. Bains et al. · IEEE Transactions on Electron Devices · 2000 · 29 citations

Engineering, Electrical Engineering, Materials Science +17

Gate quality ultrathin (2.5 nm) PECVD deposited oxynitride and nitrided oxide dielectrics

E. Ibok, Khaled Ahmed, Ming-Yin Hao et al. · IEEE Electron Device Letters · 1999 · 16 citations

Natural Sciences, Electrical Engineering, Materials Science +17

Soft breakdown in very thin Ta2O5 gate dielectric layers

Michel Houssa, Paul Mertens, M. M. Heyns et al. · Solid-State Electronics · 2000 · 10 citations

Natural Sciences, Electrical Engineering, Materials Science +14