Ya-Chi Hung

Physical and chemical mechanisms in oxide-based resistance random access memory

Kuan‐Chang Chang, Ting‐Chang Chang, Tsung‐Ming Tsai et al. · Nanoscale Research Letters · 2015 · 146 citations · Full text

Engineering, Materials Engineering, Materials Science +16

Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure

Yong-En Syu, Ting‐Chang Chang, Tsung‐Ming Tsai et al. · IEEE Electron Device Letters · 2011 · 124 citations

Natural Sciences, Materials Engineering, Materials Science +17

Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory

Yi‐Ting Tseng, Tsung‐Ming Tsai, Ting‐Chang Chang et al. · Applied Physics Letters · 2015 · 55 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Effects of Varied Negative Stop Voltages on Current Self-Compliance in Indium Tin Oxide Resistance Random Access Memory

Chih‐Yang Lin, Kuan‐Chang Chang, Ting‐Chang Chang et al. · IEEE Electron Device Letters · 2015 · 48 citations

Engineering, Materials Engineering, Materials Science +17

Temperature-Dependent Instability of Bias Stress in InGaZnO Thin-Film Transistors

Geng-Wei Chang, Ting‐Chang Chang, Jhe-Ciou Jhu et al. · IEEE Transactions on Electron Devices · 2014 · 42 citations

Engineering, Electrical Engineering, Materials Science +17