Geng-Wei Chang

Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory

Kuan‐Chang Chang, Tsung‐Ming Tsai, Ting‐Chang Chang et al. · IEEE Electron Device Letters · 2013 · 67 citations

Engineering, Electrical Engineering, Materials Science +17

Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices

Kuan‐Chang Chang, Rui Zhang, Ting‐Chang Chang et al. · IEEE Electron Device Letters · 2013 · 58 citations

Natural Sciences, Materials Science, Physics +17

Charge Quantity Influence on Resistance Switching Characteristic During Forming Process

Tian-Jian Chu, Ting‐Chang Chang, Tsung‐Ming Tsai et al. · IEEE Electron Device Letters · 2013 · 56 citations

Engineering, Electrical Engineering, Materials Science +17

Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical $\hbox{CO}_{2}$ Fluid Treatment

Tsung‐Ming Tsai, Hui‐Chun Huang, Ya‐Hsiang Tai et al. · IEEE Electron Device Letters · 2012 · 51 citations

Natural Sciences, Materials Science, Physics +15

Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications

Tsung‐Ming Tsai, Kuan‐Chang Chang, Ting‐Chang Chang et al. · IEEE Electron Device Letters · 2012 · 49 citations

Engineering, Electrical Engineering, Materials Science +17