L. Prabhu

Compatibility of polycrystalline silicon gate deposition with HfO2 and Al2O3/HfO2 gate dielectrics

D. C. Gilmer, R. I. Hegde, R. Cotton et al. · Applied Physics Letters · 2002 · 79 citations

Engineering, Electrical Engineering, Materials Science +17

Atomic layer deposition of Al2O3, ZrO2, Ta2O5, and Nb2O5 based nanolayered dielectrics

Kaupo Kukli, Mikko Ritala, Markku Leskelä et al. · Journal of Non-Crystalline Solids · 2002 · 41 citations

Natural Sciences, Materials Engineering, Materials Science +14

Multiple independent gate field effect transistor (MIGFET) - multi-fin RF mixer architecture, three independent gates (MIGFET-T) operation and temperature characteristics

L. Mathew, Yaping Du, S. Kalpat et al. · 2005 · 34 citations

Engineering, Electrical Engineering, Analog Electronics +16

Performance and Variability Comparisons between Multi-Gate FETs and Planar SOI Transistors

A. V-Y. Thean, Z-H Shi, L. Mathew et al. · 2006 · 33 citations

Engineering, Electrical Engineering, Electronic Materials +12

Performance of MOSFETs with ultra thin ZrO/sub 2/ and Zr silicate gate dielectrics

Wenjie Qi, R. Nieh, Byoung Hun Lee et al. · 2002 · 29 citations

Engineering, Electrical Engineering, Materials Science +17