Compatibility of polycrystalline silicon gate deposition with HfO2 and Al2O3/HfO2 gate dielectrics

D. C. Gilmer, R. I. Hegde, R. Cotton, +14

Applied Physics Letters

Materials ScienceMaterials EngineeringElectrical EngineeringSemiconductor DeviceEngineering +12

Atomic layer deposition of Al2O3, ZrO2, Ta2O5, and Nb2O5 based nanolayered dielectrics

Kaupo Kukli, Mikko Ritala, Markku Leskelä, +5

Journal of Non-Crystalline Solids

Materials ScienceMaterials EngineeringEngineeringNanotechnologyOxide Electronics +6

Multiple independent gate field effect transistor (MIGFET) - multi-fin RF mixer architecture, three independent gates (MIGFET-T) operation and temperature characteristics

L. Mathew, Yaping Du, S. Kalpat, +20

Migfet DevicesElectrical EngineeringIndependent GatesEngineeringRf Semiconductor +11

Performance and Variability Comparisons between Multi-Gate FETs and Planar SOI Transistors

A. V-Y. Thean, Z-H Shi, L. Mathew, +13

Device ModelingElectrical EngineeringUndoped Channel DevicesEngineeringPlanar Soi Transistors +9

Performance of MOSFETs with ultra thin ZrO/sub 2/ and Zr silicate gate dielectrics

Wenjie Qi, R. Nieh, Byoung Hun Lee, +9

Materials ScienceMaterials EngineeringElectrical EngineeringGate DielectricsEngineering +10

Compatibility of silicon gates with hafnium-based gate dielectrics

D. C. Gilmer, R. I. Hegde, R. Cotton, +16

Microelectronic Engineering

Electrical EngineeringEngineeringNanoelectronicsApplied PhysicsSilicon Gates +4

80 nm poly-Si gate CMOS with HfO/sub 2/ gate dielectric

C. Hobbs, Hsin Tseng, K. Reid, +17

Materials ScienceMaterials EngineeringElectrical EngineeringHafnium OxidePolysilicon Gate +12

Inverted T channel FET (ITFET) - Fabrication and characteristics of vertical-horizontal, thin body, multi-gate, multi-orientation devices, ITFET SRAM bit-cell operation. A novel technology for 45nm and beyond CMOS.

L. Mathew, M. Sadd, S. Kalpat, +19

Low-power ElectronicsElectrical EngineeringItfet Device ComprisesEngineeringVlsi Design +12

Determination of effects of deposition and anneal properties for tetranitratotitanium deposited TiO2 dielectrics

Hyeon-Seag Kim, Stephen A. Campbell, D. C. Gilmer, +4

Journal of Applied Physics

EngineeringOxidation ResistanceSolid-state ChemistryTtip Deposited FilmsWater Vapor +16

Uniaxial-biaxial stress hybridization for super-critical strained-si directly on insulator (SC-SSOI) PMOS with different channel orientations.

Aaron Thean, L. Prabhu, Victor Vartanian, +15

Uniaxial-biaxial Stress HybridizationEngineeringSilicon On InsulatorInterconnect (Integrated Circuits)Semiconductor Device +18