A. V-Y. Thean

Wafer-scale solution-processed 2D material analog resistive memory array for memory-based computing

Baoshan Tang, Hasita Veluri, Yida Li et al. · Nature Communications · 2022 · 204 citations · Full text

Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates

Hans Mertens, R. Ritzenthaler, Andriy Hikavyy et al. · 2016 · 192 citations

Engineering, Si Nws, Bulk Si Substrates +16

An InGaAs/InP quantum well finfet using the replacement fin process integrated in an RMG flow on 300mm Si substrates

Niamh Waldron, Clément Merckling, Weiming Guo et al. · 2014 · 90 citations

Engineering, Optoelectronic Devices, Integrated Circuits +19

Si-cap-free SiGe p-channel FinFETs and gate-all-around transistors in a replacement metal gate process: Interface trap density reduction and performance improvement by high-pressure deuterium anneal

Hans Mertens, R. Ritzenthaler, Hiroaki Arimura et al. · 2015 · 53 citations

Engineering, Integrated Circuits, Silicon On Insulator +16

Vertical device architecture for 5nm and beyond: Device & circuit implications

A. V-Y. Thean, Dmitry Yakimets, Trong Huynh-Bao et al. · 2015 · 49 citations

Engineering, Vlsi Design, Layout Efficiency +18