Performance and Variability Comparisons between Multi-Gate FETs and Planar SOI Transistors

Abstract

This paper compares the performance and inter-die variability of doped and undoped channel multiple-gate FETs (MUGFETs) with respect to planar SOI devices. We show that doped-channel FinFETs have equivalent variability to narrow-width planar devices. As such, transitions to FinFETs for narrow-width devices will likely incur minimal variability impact. To match the low variability of wide-width planar devices, conversions to undoped channel FinFETs is necessary. Furthermore, good short-channel control has to be maintained since undoped channel devices exhibit increase sensitivity to Tbody relative to doped channel FinFETs due to enhanced fully-depleted channel electrostatics