M. W. Stoker

Thermodynamic stability of high-<i>K</i> dielectric metal oxides ZrO2 and HfO2 in contact with Si and SiO2

Maciej Gutowski, John E. Jaffe, Chunli Liu et al. · Applied Physics Letters · 2002 · 364 citations

Natural Sciences, Materials Engineering, Materials Science +17

22nm High-performance SOI technology featuring dual-embedded stressors, Epi-Plate High-K deep-trench embedded DRAM and self-aligned Via 15LM BEOL

P. Chang, C. Ortolland, David Fried et al. · 2012 · 89 citations

Engineering, Computer Engineering, Electrical Engineering +17

Silicon nanocrystal based memory devices for NVM and DRAM applications

R. A. Rao, R.F. Steimle, M. Sadd et al. · Solid-State Electronics · 2004 · 85 citations

Engineering, Computer Engineering, Materials Science +14

Structure and electronic properties of zirconium and hafnium nitrides and oxynitrides

A. A. Knizhnik, A. A. Bagatur’yants, M. W. Stoker et al. · Journal of Applied Physics · 2005 · 85 citations

Natural Sciences, Materials Science, Physics +14

A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications

Siddarth Krishnan, U. Kwon, N. Moumen et al. · 2011 · 81 citations

Engineering, Computer Engineering, Electrical Engineering +17