M. W. Stoker

Thermodynamic stability of high-<i>K</i> dielectric metal oxides ZrO2 and HfO2 in contact with Si and SiO2

Maciej Gutowski, John E. Jaffe, Chunli Liu et al. · Applied Physics Letters · 2002 · 363 citations

Materials Science, Materials Engineering, Electrical Engineering +14

22nm High-performance SOI technology featuring dual-embedded stressors, Epi-Plate High-K deep-trench embedded DRAM and self-aligned Via 15LM BEOL

P. Chang, C. Ortolland, David Fried et al. · 2012 · 89 citations

High-performance Soi Technology, Engineering, Vlsi Design +16

Silicon nanocrystal based memory devices for NVM and DRAM applications

R. A. Rao, R.F. Steimle, M. Sadd et al. · Solid-State Electronics · 2004 · 85 citations

Non-volatile Memory, Electrical Engineering, Engineering +7

Structure and electronic properties of zirconium and hafnium nitrides and oxynitrides

A. A. Knizhnik, A. A. Bagatur’yants, M. W. Stoker et al. · Journal of Applied Physics · 2005 · 84 citations

Materials Engineering, Inorganic Chemistry, Materials Science +15

A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications

Siddarth Krishnan, U. Kwon, N. Moumen et al. · 2011 · 81 citations

Sige Channels, Low Power Applications, Engineering +16