E.N. Fuls

REACTIVELY SPUTTERED VANADIUM DIOXIDE THIN FILMS

E.N. Fuls, D. H. Hensler, A. R. Ross · Applied Physics Letters · 1967 · 61 citations

Materials Science, Materials Engineering, Thin Film Physics +14

MOS Compatibility of high-conductivity TaSi₂/n⁺poly-Si gates

A. K. Sinha, W.S. Lindenberger, D. B. Fraser et al. · IEEE Transactions on Electron Devices · 1980 · 54 citations

Materials Science, Semiconductors, Electrical Engineering +12

High-speed NMOS circuits made with X-ray lithography and reactive sputter etching

P.I. Suciu, E.N. Fuls, H.J. Boll · IEEE Electron Device Letters · 1980 · 33 citations

Engineering, Vlsi Design, Integrated Circuits +16

Effect of high-temperature H2-anneals on the slow-trapping instability of MOS structures

A. K. Sinha, H. J. Levinstein, L. P. Adda et al. · Solid-State Electronics · 1978 · 22 citations

Materials Science, Ii-vi Semiconductor, Transition Metal Chalcogenides +10

Gigabit Logic Circuits with Scaled nMOS

D.L. Fraser, H.J. Boll, R. Bayruns et al. · European Solid-State Circuits Conference · 1981 · 21 citations

Scaled Nmos, Electrical Engineering, Oscillator Designs +11