E.N. Fuls

REACTIVELY SPUTTERED VANADIUM DIOXIDE THIN FILMS

E.N. Fuls, D. H. Hensler, A. R. Ross · Applied Physics Letters · 1967 · 61 citations

Natural Sciences, Materials Science, Physics +16

MOS Compatibility of high-conductivity TaSi₂/n⁺poly-Si gates

A. K. Sinha, W.S. Lindenberger, D. B. Fraser et al. · IEEE Transactions on Electron Devices · 1980 · 54 citations

Engineering, Electrical Engineering, Materials Science +17

High-speed NMOS circuits made with X-ray lithography and reactive sputter etching

P.I. Suciu, E.N. Fuls, H.J. Boll · IEEE Electron Device Letters · 1980 · 33 citations

Engineering, Electrical Engineering, Microelectronics +15

Effect of high-temperature H2-anneals on the slow-trapping instability of MOS structures

A. K. Sinha, H. J. Levinstein, L. P. Adda et al. · Solid-State Electronics · 1978 · 22 citations

Natural Sciences, Materials Science, Physics +11

Gigabit Logic Circuits with Scaled nMOS

D.L. Fraser, H.J. Boll, R. Bayruns et al. · European Solid-State Circuits Conference · 1981 · 21 citations

Engineering, Computer Engineering, Electrical Engineering +17