REACTIVELY SPUTTERED VANADIUM DIOXIDE THIN FILMS

Abstract

Thin films of vanadium dioxide have been formed by reactive sputtering of vanadium in an argon atmosphere doped with a partial pressure of oxygen. The films were deposited on sapphire substrates held at 400°C and exhibit a highly oriented polycrystalline monoclinic structure at room temperature. The semiconductor to metal transition is observed at 345°K with a slight hysteresis with temperature reversal.