B. T. Chan

A new power W-gated trench MOSFET (WMOSFET) with high switching performance

M. Darwish, C. Patrick Yue, K. Lui et al. · 2004 · 76 citations

Electrical Engineering, Engineering, Nanoelectronics +8

(Invited) Vertical Nanowire FET Integration and Device Aspects

A. Veloso, Efrain Altamirano Sánchez, S. Brus et al. · ECS Transactions · 2016 · 49 citations

Low-power Electronics, Electrical Engineering, Physical Design (Electronics) +13

Junctionless gate-all-around lateral and vertical nanowire FETs with simplified processing for advanced logic and analog/RF applications and scaled SRAM cells

A. Veloso, Bertrand Parvais, Philippe Matagne et al. · 2016 · 37 citations

Engineering, Nanocomputing, Semiconductor Device +18

90nm W\Al<inf>2</inf>O<inf>3</inf>\TiW\Cu 1T1R CBRAM cell showing low-power, fast and disturb-free operation

Attilio Belmonte, W. Kim, B. T. Chan et al. · 2013 · 34 citations

Disturb-free Operation, Electrical Engineering, Non-volatile Memory +13

A flexible 300 mm integrated Si MOS platform for electron- and hole-spin qubits exploration

Ruoyu Li, Nard Dumoulin Stuyck, Stefan Kubicek et al. · 2020 · 33 citations

Engineering, Mm Process, Silicon On Insulator +19