W. Kim

Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM

Kévin Garello, Faisal Mohd-Yasin, Hubert Hody et al. · 2019 · 103 citations · Full text

Spintronics, Electrical Engineering, Non-volatile Memory +12

Time-resolved spin-torque switching in MgO-based perpendicularly magnetized tunnel junctions

T. Devolder, Joo-Von Kim, Felipe García‐Sánchez et al. · Physical review. B./Physical review. B · 2016 · 67 citations · Full text

Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM

Kévin Garello, Faisal Mohd-Yasin, Hubert Hody et al. · 2019 · 63 citations · Full text

Spintronics, Electrical Engineering, Non-volatile Memory +12

Enablement of STT-MRAM as last level cache for the high performance computing domain at the 5nm node

Sushil Sakhare, Manu Perumkunnil, Trong Huynh-Bao et al. · 2018 · 62 citations

Last Level Cache, Non-volatile Memory, Electrical Engineering +14

Co/Ni based p-MTJ stack for sub-20nm high density stand alone and high performance embedded memory application

Gouri Sankar Kar, W. Kim, T. Tahmasebi et al. · 2014 · 44 citations

Non-volatile Memory, Magnetic Properties, Engineering +28