Stefano Dalcanale

Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate

Isabella Rossetto, Matteo Meneghini, Oliver Hilt et al. · IEEE Transactions on Electron Devices · 2016 · 162 citations

Engineering, Electrical Engineering, Materials Science +17

Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs

Isabella Rossetto, Matteo Meneghini, Alaleh Tajalli et al. · IEEE Transactions on Electron Devices · 2017 · 134 citations

Engineering, Electrical Engineering, Materials Science +17

Temperature-Dependent Dynamic <inline-formula> <tex-math notation="LaTeX">$R_{\mathrm {\mathrm{{\scriptstyle ON}}}}$ </tex-math></inline-formula> in GaN-Based MIS-HEMTs: Role of Surface Traps and Buffer Leakage

Matteo Meneghini, P. Vanmeerbeek, Riccardo Silvestri et al. · IEEE Transactions on Electron Devices · 2015 · 121 citations

Engineering, Electrical Engineering, Materials Science +17

Raman Thermography of Peak Channel Temperature in <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math> </inline-formula>-Ga²O³ MOSFETs

James W. Pomeroy, Callum Middleton, Manikant Singh et al. · IEEE Electron Device Letters · 2018 · 81 citations

Engineering, Materials Science, Physics +16

Pulsed Large Signal RF Performance of Field-Plated Ga₂O₃ MOSFETs

Manikant Singh, Michael A. Casbon, Michael J. Uren et al. · IEEE Electron Device Letters · 2018 · 77 citations · Full text

Engineering, Electrical Engineering, Physics +7