R.C.M. de Kruif

Ultrafast interstitial injection during transient enhanced diffusion of boron in silicon

H.G.A. Huizing, C.C.G. Visser, N. E. B. Cowern et al. · Applied Physics Letters · 1996 · 43 citations

Engineering, Materials Engineering, Materials Science +17

Proximity gettering of transition metals in silicon by ion implantation

M.H.F. Overwijk, J. Politiek, R.C.M. de Kruif et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1995 · 32 citations

Engineering, Materials Engineering, Materials Science +11

Problems in the deconvolution of SIMS depth profiles using delta-doped test structures

P. C. Zalm, R.C.M. de Kruif · Applied Surface Science · 1993 · 25 citations

Natural Sciences, Materials Science, Spectroscopy +5

Time scales of transient enhanced diffusion: free and clustered interstitials

N. E. B. Cowern, H.G.A. Huizing, P.A. Stolk et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1996 · 21 citations

Engineering, Biophysics, Transport Phenomena +8

Enhancement of phosphorus incorporation and growth rate of epitaxial diamond films by the addition of nitrogen

Guozhong Cao, W.J.P. van Enckevort, L.J. Giling et al. · Applied Physics Letters · 1995 · 11 citations

Natural Sciences, Materials Engineering, Materials Science +15