25:T4ca,We evaluated a new FIB-GAE (Focused Ion Beam-Gas Assisted Etching) repairing process for the absorber defects on EUVL mask. XeF₂ gas and H₂O gas were used as etching assist agent and etching stop agent respectively. The H₂O gas was used to oxidize Ta-nitride side-wall and to inactivate the remaining XeF₂ gas after the completion of defect repair. At the Photomask Japan 2008 we had reported that side-etching of Ta-nitride caused CD degradation in EUVL. In the present paper we report on the performance of defect repair by FIB, and of printability using SFET (Small Field Exposure Tool). The samples evaluated, were in form of bridge defects in hp225nm L/S pattern. The cross sectional SEM images certified that the newly developed H₂O gas process prevented side-etching damage to TaBN layer and made the side-wall close to vertical. The printability also showed excellent results. There were no significant CD changes in the defocus characterization of the defect repaired region. In its defect repair process, the FIB method showed no signs of scan damage on Cr buffered EUV mask. The repair accuracy and the application to narrow pitched pattern are also discussed.26:T4df,The key challenge before EUVL is to make defect-free masks, for which it is important to identify the root cause of defects, and it is also necessary to establish suitable critical mask defect size for the production of ULSI devices. Selete has been developing EUV mask infrastructures such as a full-field actinic blank inspection tool and 199nm wavelength patterned mask inspection tool in order to support blank/mask supplier in reducing blank/mask defects which impact on wafer printing. In this paper, by evaluating the printability of programmed phase defects and absorber defects exposed by full-field scanner EUV1, we demonstrate that defect detection sensitivities of ABI (actinic blank inspection) and PI (patterned mask inspection) are higher than that of WI (wafer inspection) in HP32nm. The evaluations were done by comparing the detection sensitivities of full-field actinic blank inspection tool, 199nm wavelength patterned mask inspection tool, and wafer EB inspection tool. And then, based on the native defect analysis of blank/mask, we ascertained that actinic blank inspection and patterned mask inspection developed at Selete, are effective in detecting killer defects both at the main pattern and at light-shield border area.

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