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Development of Bulk InAsSb Alloys and Barrier Heterostructures for Long-Wave Infrared Detectors

Youxi Lin, D. Donetsky, Ding Wang, David Westerfeld, G. Kipshidze, L. Shterengas, Wendy L. Sarney, Stefan P. Svensson, Gregory Belenky

Journal of Electronic Materials · 2015 · 32 citations · 15 references

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15

Band parameters for III–V compound semiconductors and their alloys

I. Vurgaftman, J. R. Meyer, L. R. Ram‐Mohan · Journal of Applied Physics · 2001 · 7.1K citations

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n B n detector, an infrared detector with reduced dark current and higher operating temperature

S. Maimon, G. W. Wicks · Applied Physics Letters · 2006 · 682 citations

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Photoluminescence of InSb, InAs, and InAsSb grown by organometallic vapor phase epitaxy

Zhen Fang, K. Y., D. H. Jaw et al. · Journal of Applied Physics · 1990 · 319 citations

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Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice

B. V. Olson, Eric A. Shaner, J. K. Kim et al. · Applied Physics Letters · 2012 · 211 citations

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InAsSb strained-layer superlattices for long wavelength detector applications

G. C. Osbourn · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1984 · 174 citations

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