Applied Physics Letters · 2006 · 697 citations · 11 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsDetector TechnologyInfrared DetectorsPhotodetectorsSemiconductor DetectorsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesBoron Nitride DetectorsDark Current ReductionInfrared PhotodetectorsLow-temperature Detector OperationNbn Thin FilmsNoise In PhotodiodesPhotodetectionPhotodiodes
The study introduces the nBn infrared detector. The nBn detector eliminates Shockley‑Read‑Hall generation currents and is implemented in InAs and InAsSb with cutoff wavelengths of 3.4 μm and 4.2 μm. The nBn detector achieves markedly lower dark current and noise, allowing background‑limited operation at higher temperatures and improved detectivity close to room temperature.
This letter presents a type of infrared detector named the nBn detector. The nBn design essentially eliminates Shockley-Read-Hall generation currents. The result is greatly reduced dark current and noise, compared to other midwave infrared detectors, such as p-n photodiodes. This enables the nBn to operate at background-limited infrared photodetection conditions at significantly higher temperatures than conventional midwave infrared detectors and have greater detectivity near room temperature. The nBn is demonstrated in InAs and InAsSb materials, exhibiting cutoff wavelengths of 3.4 and 4.2μm, respectively.
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Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectors
S. Maimon, E. Finkman, G. Bahir et al. · Applied Physics Letters · 1998 · 263 citations · Full text
Room temperature InAsSb photovoltaic midinfrared detector
Anna Rakovska, V. Berger, X. Marcadet et al. · Applied Physics Letters · 2000 · 62 citations