n B n detector, an infrared detector with reduced dark current and higher operating temperature

TLDR

The study introduces the nBn infrared detector. The nBn detector eliminates Shockley‑Read‑Hall generation currents and is implemented in InAs and InAsSb with cutoff wavelengths of 3.4 μm and 4.2 μm. The nBn detector achieves markedly lower dark current and noise, allowing background‑limited operation at higher temperatures and improved detectivity close to room temperature.

Abstract

This letter presents a type of infrared detector named the nBn detector. The nBn design essentially eliminates Shockley-Read-Hall generation currents. The result is greatly reduced dark current and noise, compared to other midwave infrared detectors, such as p-n photodiodes. This enables the nBn to operate at background-limited infrared photodetection conditions at significantly higher temperatures than conventional midwave infrared detectors and have greater detectivity near room temperature. The nBn is demonstrated in InAs and InAsSb materials, exhibiting cutoff wavelengths of 3.4 and 4.2μm, respectively.