on GaAs grown by molecular beam epitaxy

Semiconductor core-level to valence-band maximum binding-energy differences: Precise determination by x-ray photoelectron spectroscopy

E. A. Kraut, R. W. Grant, J. R. Waldrop et al. · Physical review. B, Condensed matter · 1983 · 503 citations

Natural Sciences, Materials Science, Physics +17

Optical Properties of (Zn, Mn) and (Cd, Mn) Chalcogenide Mixed Crystals and Superlattices

O. Goede, W. Heimbrodt · physica status solidi (b) · 1988 · 279 citations

Natural Sciences, Materials Science, Physics +14

Strained-layer interfaces between II–VI compound semiconductors

Chris G. Van de Walle, Khalid Shahzad, D. J. Olego · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1988 · 49 citations

Natural Sciences, Materials Science, Physics +17

Microstructure and pseudomorphism in molecular beam epitaxially grown ZnCdS on GaAs(001)

Supratik Guha, Biao Wu, Hai‐Ping Cheng et al. · Applied Physics Letters · 1993 · 41 citations

Natural Sciences, Materials Engineering, Materials Science +17

The influence of growth conditions on sulfur incorporation in GaAs grown by molecular beam epitaxy

D. A. Andrews, R. Heckingbottom, Graham J. Davies · Journal of Applied Physics · 1983 · 30 citations

Engineering, Electrical Engineering, Materials Science +17