Concepedia

Analysis of axial resistivity during SiC crystal growth by the PVT method

Lingling Xuan, Binjie Xu, Sheng'ou Lu, Anqi Wang, Lingmao Xu, Xiaodong Pi, Deren Yang

CrystEngComm · 2025 · 12 citations · 34 references

Open access

Concepts

Natural SciencesMaterials EngineeringMaterials ScienceCeramic MaterialsMaterials CharacterizationSemiconductor MaterialsElectrical Properties Of CeramicsElectrical Resistivity MethodsSemiconductor Crystal GrowthSemiconductor Device MaterialsSilicon MaterialsResistivityResistivity MeasurementSilicon CarbideSilicon Carbide (Sic) MaterialsSilicon Carbide Crystal GrowthTemperature Dependence Of Electrical PropertiesTemperature Dependence Of ResistanceTemperature Effects On Growth

Abstract

The influence of growth front temperature (left) and C/Si ratio (right) on the axial resistivity distribution during SiC crystal growth by the PVT method.

References

34

SiC power devices &#x2014; Present status, applications and future perspective

Mikael Östling, Reza Ghandi, Carl‐Mikael Zetterling · 2011 · 329 citations

Engineering, Electrical Engineering, Materials Science +17

Bulk and epitaxial growth of silicon carbide

Tsunenobu Kimoto · Progress in Crystal Growth and Characterization of Materials · 2016 · 212 citations

Engineering, Materials Engineering, Materials Science +14

SiC Dopant Incorporation Control Using Site-Competition CVD

David Larkin · physica status solidi (b) · 1997 · 140 citations

Engineering, Materials Engineering, Materials Science +17

Progress in controlling the growth of polytypic crystals

Yuri M. Tairov, V. F. Tsvetkov · Progress in Crystal Growth and Characterization · 1983 · 122 citations

Natural Sciences, Materials Engineering, Materials Science +12

The status of SiC bulk growth from an industrial point of view

St.G. Müller, R Glass, H. McD. Hobgood et al. · Journal of Crystal Growth · 2000 · 121 citations

Engineering, Materials Engineering, Materials Science +14