A Silicon-On-Insulator Lateral IGBT With Segmented Trenches for Improving Short-Circuit Withstanding Capability

Abstract

For the first time, a silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) featuring segmented deep oxide trenches (SDOTs) is proposed, which aims to suppress the saturation current ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{\text {sat}}$ </tex-math></inline-formula> ) and enhance the short-circuit withstanding capability. SDOTs, refilled by the polysilicon and shorted to the emitter electrode, are inserted in the region nearby the inversion channel. In the ON-state, the electric potential at the channel end can be modified and effectively lowered by the grounded SDOTs, which indicates the reduced <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{\text {sat}}$ </tex-math></inline-formula> and prolonged short-circuit withstanding time ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${t}_{\text {SC}}$ </tex-math></inline-formula> ). Compared with the conventional SOI LIGBT, the proposed SOI LIGBT achieves a 49.5% decrease in <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{\text {sat}}$ </tex-math></inline-formula> at <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {CE}} = {10}$ </tex-math></inline-formula> V and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {GE}} = {15}$ </tex-math></inline-formula> V, and a 406% increase in <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${t}_{\text {SC}}$ </tex-math></inline-formula> at <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {CE}} = {400}$ </tex-math></inline-formula> V and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {GE}} = {15}$ </tex-math></inline-formula> V.